N-channel switch
With the source on the return and the drain on the load, a positive gate-to-source voltage turns on the channel.
A 40 V N-channel power MOSFET with a low on-resistance specified at 4.5 V and 10 V gate drive.
Source. It sets the gate-voltage reference and is the intrinsic diode anode.
| Pin | Signal | Direction | Function |
|---|---|---|---|
| 1 | G Input | Input | Gate. Drive with the rated voltage relative to its own source. |
| 2 | D Current terminal | Current terminal | Drain. It connects to the switched load and is the intrinsic diode cathode. |
| 3 | S Current terminal | Current terminal | Source. It sets the gate-voltage reference and is the intrinsic diode anode. |
| TAB | D Bidirectional | Bidirectional | Metal tab connected to D internally. Include its net when laying out the footprint. |
| Parameter | Limit | Conditions and source |
|---|---|---|
| Drain-to-source voltage40 V | 40 V | Absolute maximum with the gate off. Allow margin for supply and switching transients. International Rectifier IRLB3034PbF, Absolute Maximum Ratings |
| Gate-to-source voltage±20 V | ±20 V | Absolute maximum. Gate drive in this example is 5 V. International Rectifier IRLB3034PbF, Absolute Maximum Ratings |
| Maximum on-resistance2 mΩ | 2 mΩ | At VGS = 4.5 V and TJ = 25 °C under the data sheet’s pulsed test. At 10 V gate drive the limit is 1.7 mΩ. International Rectifier IRLB3034PbF, Electrical Characteristics |
TO-220AB. The mounting tab is electrically connected to the drain.